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2N6016
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2N6016

SKU: 2N6016
2N6016 Transistor Silicon NPN CASE: X55-1 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case X55-1
Manufacturer Generic
Vbr CBO 70
Vbr CEO 60
Max. PD (W) 500m
C(ob) (F) 10p
Derate (Amb) (W/°C) 8.0m
hfe 250
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 240 MHz
Forward Current Transfer Ratio (hFE), MIN 240
SKU 772489
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