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2N603A
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2N603A

SKU: 2N603A
2N603A Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 120m
C(ob) (F) 5.0p
hfe 100=
Icbo Max. @Vcb Max. (A) 5.0u
Polarity PNP
Trans. Freq (Hz) Min. 12M
@VCE (test) (V) 1.0
@Ic (A) 500u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.12 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 0.01 A
Max. Operating Junction Temperature (Tj) 90 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 772469
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