2N6060

SKU: 2N6060

2N6060 Transistor Silicon PNP CASE: TO61 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO61
Manufacturer	USA Make
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	150
t(f) Max. (S)	2.0u+
Max. hFE	120
Min hFE	25
Ic Max. (A)	50
@Ic (test) (A)	20
Icbo Max. @Vcb Max. (A)	500u
Polarity	PNP
Tr Max. (s)	1.5u
R(sat) (Û)	50m
Derate Above 25°C	1.5
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	150 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	50 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	850 pF
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	772448

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