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2N6066
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2N6066

SKU: 2N6066
2N6066 Transistor Germanium PNP CASE: TO8 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO8
Manufacturer Generic
Vbr CBO 160
Vbr CEO 160
Max. PD (W) 56
t(f) Max. (S) 15u+
Max. hFE 50
Min hFE 20
Ic Max. (A) 10
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 3.0m
Polarity PNP
Tr Max. (s) 10u
R(sat) (Û) 80m
Derate Above 25°C 670m
Oper. Temp (°C) Max. 125
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 56 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 368657
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