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2N607
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2N607

SKU: 2N607
2N607 Transistor Germanium PNP CASE: TO5 MAKE: Semiconductor Technology
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Semiconductor Technology
Vbr CBO 15
Vbr CEO 15
Max. PD (W) 120m
C(ob) (F) 7.0p
Derate (Amb) (W/°C) 2.0m
hfe 80-
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 85
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.12 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.015 A
Max. Operating Junction Temperature (Tj) 90 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 573222
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