2N6082

SKU: 2N6082

2N6082 Transistor Silicon NPN CASE: SOT120 MAKE: Generic

Datasheet

2N6082 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT120
Manufacturer	New Jersey Semiconductor
Vbr CBO	36
Vbr CEO	18
Max. PD (W)	50
Min hFE	5.0
Ic Max. (A)	4.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	520m
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	4-28
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	36 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	130 pF
Transition Frequency (ft):	175 MHz
Forward Current Transfer Ratio (hFE), MIN	5
SKU	342780

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