The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N6097
View detailed images (12)

2N6097

SKU: 2N6097
2N6097 Transistor Silicon NPN CASE: SOT121 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case SOT121
Manufacturer Motorola Semiconductor
Vbr CBO 36
Vbr CEO 18
Max. PD (W) 60
Derate (Amb) (W/°C) 343m
Min hFE 15
Ic Max. (A) 6.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 2.5m
Polarity NPN
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 36 V
Maximum Collector-Emitter Voltage |Vce| 18 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 400 pF
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 553131
Back