2N6116

SKU: 2N6116

2N6116 Transistor Silicon NPN CASE: X104-1 MAKE: Generic

Datasheet

2N6116 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	X104-1
Manufacturer	New Jersey Semiconductor
Max. PD (W)	250m
It(stat) Max. (A)	200m
Itrm Max. (A)	1.0
Polarity	NPN
@Vs (V)	10
@RG (Û)	1.0M
Igao Max. (A)	5.0n
t(switch) Typ. (S)	40n
V(gkf) Rated Max.	40
V(T) Max.	1.6
Oper. Temp (°C) Min	-55
Oper. Temp (°C) Max.	125
@Pulse Width (S)	100u
@ Temp (°C)	25#
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	90 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	200 pF
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	368662

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