2N6127

SKU: 2N6127

2N6127 Transistor Silicon PNP CASE: TO61 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO61
Manufacturer	Generic
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	67
Derate (Amb) (W/°C)	670m
Max. hFE	120
Min hFE	30
Ic Max. (A)	10
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Trans. Freq (Hz) Min.	40M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	67 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	82265

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