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2N617
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2N617

SKU: 2N617
2N617 Transistor Germanium PNP CASE: TO5 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer USA Make
Vbr CBO 15
Vbr CEO 12
Max. PD (W) 125m
C(ob) (F) 7.0p-
hfe 15-
Ic Max. (A) 150m
Icbo Max. @Vcb Max. (A) 6.0u
Polarity PNP
Trans. Freq (Hz) Min. 7.5M-
@VCE (test) (V) 9.0
Oper. Temp (°C) Max. 85
@Ic (A) 500u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.125 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 56 pF
Transition Frequency (ft): 7.5 MHz
Forward Current Transfer Ratio (hFE), MIN 7.5
SKU 772393
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