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2N6179
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2N6179

SKU: 2N6179
2N6179 Transistor Silicon NPN CASE: TO126 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Generic
Vbr CBO 75
Vbr CEO 75
Max. PD (W) 10
t(f) Max. (S) 800n+
Max. hFE 250
Min hFE 40
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Polarity NPN
Tr Max. (s) 80n
R(sat) (Û) 1.6
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 75 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 368670
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