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2N6188
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2N6188

SKU: 2N6188
2N6188 Transistor Silicon PNP CASE: TO59 MAKE: Generic
Datasheet
2N6188 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO59
Manufacturer New Jersey Semiconductor
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 60
Derate (Amb) (W/°C) 343m
t(f) Max. (S) 200n
Max. hFE 120
Min hFE 30
Ic Max. (A) 10
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 100n
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 300 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 772387
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