Weight |
0.01 kg
|
Case |
TO39 |
Type |
Transistor Silicon PNP |
Manufacturer |
Diverse |
Vbr CBO |
100 |
Vbr CEO |
100 |
Max. PD (W) |
10 |
Derate (Amb) (W/°C) |
57m |
t(f) Max. (S) |
200n |
Max. hFE |
120 |
Min hFE |
30 |
Ic Max. (A) |
5.0 |
@Ic (test) (A) |
2.0 |
Icbo Max. @Vcb Max. (A) |
10u |
Polarity |
PNP |
Tr Max. (s) |
100n |
Trans. Freq (Hz) Min. |
30M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
2.0 |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
10 W |
Maximum Collector-Base Voltage |Vcb| |
100 V |
Maximum Collector-Emitter Voltage |Vce| |
100 V |
Maximum Emitter-Base Voltage |Veb| |
6 V |
Maximum Collector Current |Ic max| |
5 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Collector Capacitance (Cc) |
300 pF |
Transition Frequency (ft): |
30 MHz |
Forward Current Transfer Ratio (hFE), MIN |
30 |
SKU |
82875 |