Weight |
0.05 kg
|
Case |
TO66 |
Type |
Transistor Silicon PNP |
Manufacturer |
Microsemi Corporation |
Vbr CBO |
350 |
Vbr CEO |
350 |
Max. PD (W) |
20 |
Derate (Amb) (W/°C) |
200m |
t(f) Max. (S) |
600n |
Max. hFE |
100 |
Min hFE |
10 |
Ic Max. (A) |
2.0 |
@Ic (test) (A) |
1.0 |
Polarity |
PNP |
Tr Max. (s) |
600n |
R(sat) (Û) |
1.6 |
Trans. Freq (Hz) Min. |
20M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
3.2 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
35 W |
Maximum Collector-Base Voltage |Vcb| |
350 V |
Maximum Collector-Emitter Voltage |Vce| |
300 V |
Maximum Emitter-Base Voltage |Veb| |
6 V |
Maximum Collector Current |Ic max| |
2 A |
Max. Operating Junction Temperature (Tj) |
200 °C |
Collector Capacitance (Cc) |
220 pF |
Transition Frequency (ft): |
20 MHz |
Forward Current Transfer Ratio (hFE), MIN |
10 |
SKU |
82266 |