2N623
View detailed images (12)

2N623

SKU: 2N623
2N623 Transistor Germanium PNP CASE: TO9 MAKE: Semiconductor Technology
Product specifications
Type Transistor Germanium PNP
Case TO5
Manufacturer Semiconductor Technology
Vbr CBO 30
Max. PD (W) 40m
C(ob) (F) 3.5p
Derate (Amb) (W/°C) 1.0m
hfe 35
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 90.M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 60
@Ic (A) 2.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.04 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.06 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 90 MHz
Forward Current Transfer Ratio (hFE), MIN 35
SKU 772358
Back