The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N6307M

2N6307M

SKU: 2N6307M
2N6307M Transistor Silicon NPN CASE: TO3 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Motorola Semiconductor
Polarity NPN
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 650 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 250 pF
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 606171
Back