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2N6309
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2N6309

SKU: 2N6309
2N6309 Transistor Silicon NPN CASE: TO114 MAKE: Motorola Semiconductor
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case TO114
Manufacturer Motorola Semiconductor
Vbr CBO 120
Vbr CEO 100
Max. PD (W) 400
t(f) Max. (S) 250n
Max. hFE 180
Min hFE 40
Ic Max. (A) 90
@Ic (test) (A) 25
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Tr Max. (s) 400n
R(sat) (Û) 40m
Derate Above 25°C 2.2
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-40
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 400 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 90 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 1000 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 553139
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