The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N6309
View detailed images (1)

2N6309

SKU: 2N6309
2N6309 Transistor Silicon NPN CASE: TO114 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO114
Manufacturer Motorola Semiconductor
Vbr CBO 120
Vbr CEO 100
Max. PD (W) 400
t(f) Max. (S) 250n
Max. hFE 180
Min hFE 40
Ic Max. (A) 90
@Ic (test) (A) 25
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Tr Max. (s) 400n
R(sat) (Û) 40m
Derate Above 25°C 2.2
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number 4-40
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 400 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 90 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 1000 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 553139
Back