2N6312

SKU: 2N6312

2N6312 Transistor Silicon PNP CASE: TO66 MAKE: Generic

Datasheet

2N6312 Datasheet

Product specifications

Weight	0.05 kg
Type	Transistor Silicon PNP
Case	TO66
Manufacturer	Central Semiconductor
Vbr CBO	40
Vbr CEO	40
Max. PD (W)	75
Derate (Amb) (W/°C)	430m
t(f) Max. (S)	200n-
Max. hFE	100
Min hFE	25
Ic Max. (A)	5.0
@Ic (test) (A)	1.5
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Trans. Freq (Hz) Min.	4.0M
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	75 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	800 pF
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	606172

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