2N6317

SKU: 2N6317

2N6317 Transistor Silicon PNP CASE: TO3 MAKE: Microsemi Corporation

Price:

£14.39 Inc. VAT (£11.99 Ex. VAT)

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Datasheet

2N6317 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Microsemi Corporation
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	90
Derate (Amb) (W/°C)	515m
t(f) Max. (S)	800n
Max. hFE	100
Min hFE	20
Ic Max. (A)	7.0
@Ic (test) (A)	2.5
Icbo Max. @Vcb Max. (A)	250u
Polarity	PNP
Tr Max. (s)	700n
Trans. Freq (Hz) Min.	4.0M
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	90 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	200 pF
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	83241

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