2N632

SKU: 2N632

2N632 Transistor Germanium PNP CASE: TO5 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	30
Vbr CEO	24
Max. PD (W)	167m
Derate (Amb) (W/°C)	2.8m
hfe	100-
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	25u
Polarity	PNP
Trans. Freq (Hz) Min.	1.0M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	85
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.17 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	95 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	150
SKU	772289

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