2N6329

SKU: 2N6329

2N6329 Transistor Silicon PNP CASE: TO3 MAKE: Generic

Datasheet

2N6329 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO3
Manufacturer	Advanced Semiconductor
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	114
Derate (Amb) (W/°C)	1.1
Max. hFE	30
Min hFE	6.0
Ic Max. (A)	30
@Ic (test) (A)	30
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	PNP
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	40 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	6
SKU	606173

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