2N6331
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2N6331

SKU: 2N6331
2N6331 Transistor Silicon PNP CASE: TO3 MAKE: ASI
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer ASI
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 114
Derate (Amb) (W/°C) 1.1
Max. hFE 30
Min hFE 6.0
Ic Max. (A) 30
@Ic (test) (A) 30
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 175
@VCE (V) 4.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 40 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 6
SKU 116282
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