The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N6356

2N6356

SKU: 2N6356
2N6356 Transistor Silicon NPN CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Generic
Vbr CEO 40
Max. PD (W) 150
Max. hFE 10k
Min hFE 1.5k
Ic Max. (A) 20
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 2.0m
Mat. Silicon Logic
Polarity NPN
Derate Above 25°C 1.2
@VCE (test) 5.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-38
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 600 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 1500
SKU 366296
Back