The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N6362
View detailed images (12)

2N6362

SKU: 2N6362
2N6362 Transistor Silicon NPN CASE: SOT119 MAKE: Solitron Devices
Product specifications
Type Transistor Silicon NPN
Case SOT119
Manufacturer Solitron Devices
Vbr CBO 60
Vbr CEO 22
Max. PD (W) 110
Ic Max. (A) 6.0
Icbo Max. @Vcb Max. (A) 10m
Polarity NPN
Derate Above 25°C 630m
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 110 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 22 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 35
SKU 578635
Back