The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N6365
View detailed images (4)

2N6365

SKU: 2N6365
2N6365 Transistor Germanium PNP CASE: TO18 MAKE: Motorola Semiconductor
Product specifications
Equivalent 2N6365A
Type Transistor Germanium PNP
Case TO18
Manufacturer Motorola Semiconductor
Vbr CBO 30
Vbr CEO 10
Max. PD (W) 150m
Derate (Amb) (W/°C) 2.0m
hfe 20
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 10 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 553141
Back