2N637

SKU: 2N637

2N637 Transistor Germanium PNP CASE: TO3 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	USA Make
Vbr CBO	40
Vbr CEO	40
Max. PD (W)	25
t(f) Max. (S)	35u-
Max. hFE	60
Min hFE	30
Ic Max. (A)	5.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	PNP
Tr Max. (s)	15u-
Derate Above 25°C	500m
Oper. Temp (°C) Max.	100
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	90 °C
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	772239

Back