2N637B
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2N637B

SKU: 2N637B
2N637B Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 25
t(f) Max. (S) 35u-
Max. hFE 60
Min hFE 30
Ic Max. (A) 5.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 5.0m
Polarity PNP
Tr Max. (s) 15u-
Derate Above 25°C 500m
Oper. Temp (°C) Max. 100
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 90 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 606174
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