2N6381

SKU: 2N6381

2N6381 Transistor Silicon PNP CASE: TO61 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO61
Manufacturer	Generic
Vbr CBO	120
Vbr CEO	100
Max. PD (W)	250
Derate (Amb) (W/°C)	1.4
t(f) Max. (S)	250n
Max. hFE	120
Min hFE	30
Ic Max. (A)	50
@Ic (test) (A)	20
Icbo Max. @Vcb Max. (A)	50u
Polarity	PNP
Tr Max. (s)	350n
R(sat) (Û)	60m
Trans. Freq (Hz) Min.	25M
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	250 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	50 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	1500 pF
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	772232

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