2N6422

SKU: 2N6422

2N6422 Transistor Silicon PNP CASE: TO66 MAKE: Generic

Datasheet

2N6422 Datasheet

Product specifications

Weight	0.05 kg
Type	Transistor Silicon PNP
Case	TO66
Manufacturer	MOSPEC Semiconductor
Vbr CBO	500
Vbr CEO	300
Max. PD (W)	35
Derate (Amb) (W/°C)	200m
t(f) Max. (S)	3.0u
Max. hFE	80
Min hFE	8.0
Ic Max. (A)	2.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	PNP
Tr Max. (s)	3.0u
R(sat) (Û)	750m
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	200
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	400 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	8
SKU	366460

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