| Weight |
0.05 kg
|
| Type |
Transistor Silicon PNP |
| Case |
TO66 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CBO |
250 |
| Vbr CEO |
225 |
| Max. PD (W) |
20 |
| Derate (Amb) (W/°C) |
133m |
| t(f) Max. (S) |
300n- |
| Max. hFE |
200 |
| Min hFE |
40 |
| Ic Max. (A) |
250m |
| @Ic (test) (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
250u |
| Polarity |
PNP |
| R(sat) (Û) |
10 |
| Trans. Freq (Hz) Min. |
10M |
| Oper. Temp (°C) Max. |
175 |
| @VCE (V) |
10 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
20 W |
| Maximum Collector-Base Voltage |Vcb| |
250 V |
| Maximum Collector-Emitter Voltage |Vce| |
225 V |
| Maximum Collector Current |Ic max| |
0.25 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Collector Capacitance (Cc) |
20 pF |
| Transition Frequency (ft): |
10 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SKU |
553159 |