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2N6430
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2N6430

SKU: 2N6430
2N6430 Transistor Silicon NPN CASE: TO18 MAKE: Motorola Semiconductor
Datasheet
2N6430 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Motorola Semiconductor
Vbr CBO 200
Vbr CEO 200
Max. PD (W) 500m
Derate (Amb) (W/°C) 2.8m
hfe 50
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 30m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 200 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 553161
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