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2N6437
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2N6437

SKU: 2N6437
2N6437 Transistor Silicon PNP CASE: TO3 MAKE: Generic
Datasheet
2N6437 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer MOSPEC Semiconductor
Vbr CBO 120
Vbr CEO 100
Max. PD (W) 200
Derate (Amb) (W/°C) 1.1
t(f) Max. (S) 250n
Max. hFE 80
Min hFE 20
Ic Max. (A) 25
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Tr Max. (s) 300n
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 700 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 368694
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