2N649

SKU: 2N649

2N649 Transistor Germanium NPN CASE: TO1 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	TO1
Manufacturer	Generic
Vbr CBO	20
Vbr CEO	18
Max. PD (W)	100m
Derate (Amb) (W/°C)	2.0m
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	14u
Polarity	NPN
Oper. Temp (°C) Max.	71
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.1 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	120 °C
Transition Frequency (ft):	12 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	772168

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