The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N6501

2N6501

SKU: 2N6501
2N6501 Transistor Silicon NPN CASE: TO86 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO86
Manufacturer Motorola Semiconductor
Min hFE 30
Polarity NPN
PD Max. (W) 600m
@VCE (test) (V) 2.0
@Ic (test) 500m
Pinout Equivalence Number 14-493
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 553167
Back