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2N6516
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2N6516

SKU: 2N6516
2N6516 Transistor Silicon NPN CASE: TO92 MAKE: Generic
Datasheet
2N6516 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Samsung Electronic
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 625m
C(ob) (F) 6.0p
Derate (Amb) (W/°C) 5.0m
hfe 30
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 40M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.625 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 85674
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