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2N6551
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2N6551

SKU: 2N6551
2N6551 Transistor Silicon NPN CASE: TO202 MAKE: Generic
Datasheet
2N6551 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO202
Manufacturer New Jersey Semiconductor
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 2.0
Max. hFE 300
Min hFE 80
Ic Max. (A) 1.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
R(sat) (Û) 2.0
Derate Above 25°C 16m
Trans. Freq (Hz) Min. 75M
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 4-27
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 115169
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