| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
SOT128 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CBO |
350 |
| Vbr CEO |
350 |
| Max. PD (W) |
2.0 |
| Max. hFE |
180 |
| Min hFE |
40 |
| Ic Max. (A) |
500m |
| @Ic (test) (A) |
30m |
| Icbo Max. @Vcb Max. (A) |
200n |
| Polarity |
NPN |
| R(sat) (Û) |
20 |
| Derate Above 25°C |
16m |
| Trans. Freq (Hz) Min. |
45M |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
10 |
| Pinout Equivalence Number |
4-20 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
2 W |
| Maximum Collector-Base Voltage |Vcb| |
350 V |
| Maximum Collector-Emitter Voltage |Vce| |
350 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
0.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
45 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SKU |
553170 |