2N656S

2N656S

SKU: 2N656S
2N656S Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 4.0
Max. hFE 90
Min hFE 30
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
R(sat) (Û) 25
Derate Above 25°C 22m
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2.8 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 75 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 553171
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