| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO3 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CEO |
60 |
| Max. PD (W) |
120 |
| t(on) Delay (S) |
150n |
| t(f) Max. (S) |
2.0u |
| Max. hFE |
5.0k |
| Min hFE |
500 |
| Ic Max. (A) |
15 |
| @Ic (test) (A) |
10 |
| Icbo Max. @Vcb Max. (A) |
500u |
| Mat. |
Silicon Logic |
| Polarity |
NPN |
| Tr Max. (s) |
1.0u |
| R(sat) (Û) |
280m |
| t(stor) Max. (S) |
7.0u |
| Derate Above 25°C |
685m |
| Trans. Freq (Hz) Min. |
200M |
| @VCE (test) |
3.0 |
| Oper. Temp (°C) Max. |
175 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
120 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
7 V |
| Maximum Collector Current |Ic max| |
15 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Transition Frequency (ft): |
4 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
500 |
| SKU |
83912 |