2N657S

SKU: 2N657S

2N657S Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Motorola Semiconductor
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	4.0
Max. hFE	90
Min hFE	30
Ic Max. (A)	500m
@Ic (test) (A)	200m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
R(sat) (Û)	25
Derate Above 25°C	22m
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	2.8 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	10 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	0.8 A
Max. Operating Junction Temperature (Tj)	75 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	553172

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