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2N6584
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2N6584

SKU: 2N6584
2N6584 Transistor Silicon NPN CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Generic
Vbr CBO 550
Vbr CEO 450
Max. PD (W) 125
t(f) Max. (S) 500n
Max. hFE 35
Min hFE 7.0
Ic Max. (A) 10
@Ic (test) (A) 7.0
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Tr Max. (s) 500n
R(sat) (Û) 214m
Derate Above 25°C 714m
Trans. Freq (Hz) Min. 25M
Oper. Temp (°C) Max. 175
@VCE (V) 3.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 550 V
Maximum Collector-Emitter Voltage |Vce| 450 V
Maximum Emitter-Base Voltage |Veb| 9 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 250 pF
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN 7
SKU 772090
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