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2N6591
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2N6591

SKU: 2N6591
2N6591 Transistor Silicon NPN CASE: TO202 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO202
Manufacturer Generic
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 2.0
Max. hFE 200
Min hFE 40
Ic Max. (A) 500m
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 200n
Polarity NPN
R(sat) (Û) 4.0
Derate Above 25°C 16m
Trans. Freq (Hz) Min. 70M
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 4-20
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 772083
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