2N662

SKU: 2N662

2N662 Transistor Germanium PNP CASE: TO5 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	25
Vbr CEO	10
Max. PD (W)	171m
C(ob) (F)	20p
Derate (Amb) (W/°C)	2.8m
Ic Max. (A)	1.0
Icbo Max. @Vcb Max. (A)	25u
Polarity	PNP
Trans. Freq (Hz) Min.	4.0M
Oper. Temp (°C) Max.	85
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	14 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	120 °C
Collector Capacitance (Cc)	24 pF
Transition Frequency (ft):	4 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	772068

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