2N663

SKU: 2N663

2N663 Transistor Germanium PNP CASE: TO3 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	USA Make
Vbr CBO	50
Vbr CEO	25
Max. PD (W)	10
Max. hFE	75
Min hFE	25
Ic Max. (A)	4.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	4.0m
Polarity	PNP
Tr Max. (s)	10u
Derate Above 25°C	500m
Trans. Freq (Hz) Min.	15k
Oper. Temp (°C) Max.	100
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	35 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	85 °C
Transition Frequency (ft):	0.15 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	772058

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