The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N6666
View detailed images (12)

2N6666

SKU: 2N6666
2N6666 Transistor Silicon PNP CASE: TO220 MAKE: NTE Electronics
Price:
£7.19 Inc. VAT (£5.99 Ex. VAT)
£7.19 Inc. VAT (£5.99 Ex. VAT)
Qty
  • 4 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2N6666 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer NTE Electronics
Vbr CEO 40
Max. PD (W) 26
Max. hFE 20k
Min hFE 1.0k
Ic Max. (A) 8.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 3.0m
Mat. Silicon Logic
Polarity PNP
R(sat) (Û) 375m
Derate Above 25°C 520m
Trans. Freq (Hz) Min. 20M
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-37
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 65 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 1000
SKU 313202
Back