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2N6676
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2N6676

SKU: 2N6676
2N6676 Transistor Silicon NPN CASE: TO3 MAKE: Generic
Datasheet
2N6676 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Microsemi
Vbr CBO 450
Vbr CEO 300
Max. PD (W) 175
t(f) Max. (S) 500n
Max. hFE 20
Min hFE 8.0
Ic Max. (A) 15
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 600n
R(sat) (Û) 100m
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 175
@VCE (V) 3.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 175 W
Maximum Collector-Base Voltage |Vcb| 450 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 500 pF
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 8
SKU 115173
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