The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N6686
View detailed images (13)

2N6686

SKU: 2N6686
2N6686 Transistor Silicon NPN CASE: TO3 MAKE: Generic
Datasheet
2N6686 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer SemeLAB
Vbr CBO 260
Vbr CEO 160
Max. PD (W) 200
t(f) Max. (S) 250n
Max. hFE 100
Min hFE 25
Ic Max. (A) 25
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Tr Max. (s) 350n
R(sat) (Û) 60m
Derate Above 25°C 1.1
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 260 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 368721
Back