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2N6709
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2N6709

SKU: 2N6709
2N6709 Transistor Silicon PNP CASE: TO226 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO226
Manufacturer Continental Device India Limited
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 2.0
Derate (Amb) (W/°C) 20m
Min hFE 40
Ic Max. (A) 2.0
@Ic (test) (A) 250m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 772000
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