Weight |
0.01 kg
|
Case |
TO237 |
Type |
Transistor Silicon PNP |
Manufacturer |
NTE Electronics |
Vbr CBO |
100 |
Vbr CEO |
100 |
Max. PD (W) |
2.0 |
Derate (Amb) (W/°C) |
20m |
Min hFE |
80 |
Ic Max. (A) |
2.0 |
@Ic (test) (A) |
50m |
Icbo Max. @Vcb Max. (A) |
100n |
Polarity |
PNP |
Trans. Freq (Hz) Min. |
50M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
1.0 |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
2 W |
Maximum Collector-Base Voltage |Vcb| |
100 V |
Maximum Collector-Emitter Voltage |Vce| |
100 V |
Maximum Collector Current |Ic max| |
2 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
50 MHz |
Forward Current Transfer Ratio (hFE), MIN |
80 |
SKU |
85330 |