2N676

SKU: 2N676

2N676 Transistor Germanium PNP CASE: TO3 MAKE: Advanced Research Association

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Advanced Research Association
Min hFE	15k
Mat.	Germanium
Polarity	PNP
PD Max. (W)	10
@Ic (test)	1.0
Ic Max.	3.0
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	30 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	140 °C
Transition Frequency (ft):	0.4 MHz
Forward Current Transfer Ratio (hFE), MIN	1000
SKU	771975

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